DRAM Read Burst (EDO/FP)

4/5 - (7 votes)
4/5 - (7 votes)

DRAM Read Burst (EDO/FP)

Option name:

DRAM Read Burst (EDO/FP)

Possible values of an option:

[x222/x333], [x322/x333], [x333/x444], [x444/x444]

The option description:

Allows to specify time delays at package data reading from storage. Value to a slash is responsible for storage of type EDO, after a slash — for storage of type FPM. Naturally, the variant corresponding to type of installed storage will be used. For 60 ns storages EDO are normally used time delays [х222] (the amount of clock periods for the first reversal, naturally, here is not underlined, for it the option answers

[DRAM R/W Leadoff Timing]

), for 70 ns storages EDO — [x333]. For FPM 60 ns — [x333], for FPM 70 ns — [x444]. It is possible to try to reduce slightly used time delays, but, as a rule, stability of operation of the computer thus decreases.

Package reading allows to accelerate noticeably the data acquisition, allocated in the following one after another four storage cells. In the first phase (all their four) there is a standard procedure of reversal to storage cell. Following three phases — data acquisition from three following cells. Similarly there is also a package record.

Other options identical to destination:

DRAM Read Burst

DRAM Read Burst Timing

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