DRAM tRCD Select

Option name:

DRAM tRCD Select

Possible values of an option:

Depend on storage type, there can be a variant [Auto]

The option description:

Time delay between signals RAS and CAS at reversal to storage cell (parameter tRCD in the access chart). For SDRAM there are enough [2] clock periods, but for problem units of storage it can be demanded to increase this value to [3]. If to speak about DDR SDRAM the time delay normally makes the same [2] or [3] clock periods. For DDR2 SDRAM values from [3] to [6] clock periods, and for DDR3 SDRAM — from [6] to [10] clock periods are characteristic. Some problem units of storage cannot work normally without setting certainly the worst values. Among possible values can be present and a variant [Auto] (the information undertakes from chip SPD).

Other options identical to destination:

(Trcd) RAS to CAS R/W Delay

Active to CMD (Trcd)

DRAM RAS# to CAS# Delay

DRAM Timing tRCD

DRAM Trcd Timing Value

RAM RAS# to CAS# Delay

RAS to Active Time (tRCD)

RAS to CAS Delay

RAS to CAS Delay (tRCD)

(Trcd) RAS to CAS R/W Delay

(Trcd) RAS to CAS R/W Delay

SDRAM RAS To CAS Delay

SDRAM RAS To CAS Delay

SDRAM RAS To CAS Delay

SDRAM Trcd Timing Value

T (RCD)

TRCD

TRCD